PROPERTIES OF ULTRATHIN THERMAL NITRIDES IN SILICON SCHOTTKY-BARRIER STRUCTURES

被引：25

作者：

SOBOLEWSKI, MA

HELMS, CR

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 07期

关键词：

D O I：

10.1063/1.100903

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：638 / 640

页数：3

共 15 条

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