Light-extraction enhancement of GaInN light-emitting diodes by graded-refractive-index indium tin oxide anti-reflection contact

被引：285

作者：

Kim, Jong Kyu ^{[1
]}

Chhajed, Sameer ^{[1
]}

Schubert, Martin F. ^{[1
]}

Schubert, E. Fred ^{[1
]}

Fischer, Arthur J. ^{[2
]}

Crawford, Mary H. ^{[2
]}

Cho, Jaehee ^{[3
]}

Kim, Hyunsoo ^{[3
]}

Sone, Cheolsoo ^{[3
]}

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] Sandia Natl Labs, Semiconductor Mat & Device Sci Dept, Albuquerque, NM 87185 USA

[3] Samsung Electromechan Co Ltd, OS Lab, Suwon 443743, South Korea

来源：

ADVANCED MATERIALS | 2008年 / 20卷 / 04期

关键词：

D O I：

10.1002/adma.200701015

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

GaInN LEDs with a six-layer graded-refractive-index antireflection coating made entirely of indium tin oxide (ITO) are demonstrated to have 24.3 % higher light output than LEDs with dense ITO coating. The increased light-output of the LEDs with graded-refractive-index antireflection coating is attributed to the virtual elimination of Fresnel reflection and surface roughening of low-refractive index ITO.

引用

页码：801 / +

页数：5

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