Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells

被引：45

作者：

Gotoh, H ^{[1
]}

Tawara, T ^{[1
]}

Kobayashi, Y ^{[1
]}

Kobayashi, N ^{[1
]}

Saitoh, T ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1632539

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a large change in the photoluminescence (PL) properties induced by piezoelectric effects found in 10-nm-thick InGaN quantum wells. The time-resolved PL properties are measured with changing excitation intensity at 17 K. A blueshift in the PL peak of 200 meV and a decrease in the PL decay time from 3 mus to 17 ns are found with increasing excitation intensity. This large change is caused by a strong internal electric field up to 1 MV/cm and a spatial separation between an electron and a hole of as much as three times the Bohr radius. (C) 2003 American Institute of Physics.

引用

页码：4791 / 4793

页数：3

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