Characteristics of reactive ion etching for zinc telluride using CH4 and H2 gases

被引：24

作者：

Guo, QX ^{[1
]}

Matsuse, M

Tanaka, T

Nishio, M

Ogawa, H

Chang, Y

Wang, J

Wang, SL

机构：

[1] Saga Univ, Dept Elect & Elect Engn, Fac Sci & Engn, Saga 8408502, Japan

[2] Saga Univ, Venture Business Lab, Saga 8408502, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2001年 / 19卷 / 05期

关键词：

D O I：

10.1116/1.1379802

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have studied the characteristics of reactive ion etching for zinc telluride using CH4 and H-2 crases. The effects of CH4/H-2 gas composition, total gas pressure, and plasma power on the etching properties were investigated. It was found that variation of the CH4 concentration in gas mixtures leads to changes in both the etching rate and the surface morphology. The etching rate of ZnTe increases from 128 to 629 Angstrom /min with increasing the plasma power from 50 to 300 W at a 4% CH4 concentration and 25 Pa pressure. A smooth etched ZnTe surface was obtained in the range of 4%-16% CH4 concentration and 10-65 Pa. pressure. (C) 2001 American Vacuum Society.

引用

页码：2232 / 2234

页数：3

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