Environment-dependent thermal instability of sol-gel derived amorphous indium-gallium-zinc-oxide thin film transistors

被引：79

作者：

Chung, Wan-Fang ^{[2
]}

Chang, Ting-Chang ^{[1
,3
]}

Li, Hung-Wei ^{[4
]}

Chen, Shih-Ching ^{[1
]}

Chen, Yu-Chun ^{[1
]}

Tseng, Tseung-Yuen ^{[2
]}

Tai, Ya-Hsiang ^{[5
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 300, Taiwan

[3] Natl Sun Yat Sen Univ, Ctr Nanosci & Nanotechnol, Kaohsiung 804, Taiwan

[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Dept Photon, Hsinchu 300, Taiwan

[5] Natl Chiao Tung Univ, Display Inst, Dept Photon, Hsinchu 300, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 15期

关键词：

ZNO; NITRIDE; LAYER;

D O I：

10.1063/1.3580614

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The environment-dependent electrical performances as a function of temperature for sol-gel derived amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors are investigated in this letter. In the ambients without oxygen, thermal activation dominates and enhances device performance. In oxygen-containing environments, mobility and drain current degrades and the threshold slightly increase as temperature increases. We develop a porous model for a-IGZO film relating to the drain current and mobility lowering due to film porosity and oxygen adsorption/penetration. It also relates to the threshold voltage recovery at high temperature owing to the varying form of adsorbed oxygen and the combination of oxygen and vacancies. (C) 2011 American Institute of Physics. [doi:10.1063/1.3580614]

引用

页数：3

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