Formation Mechanism of Solution-Processed Nanocrystalline InGaZnO Thin Film as Active Channel Layer in Thin-Film Transistor

被引：193

作者：

Kim, Gun Hee ^{[1
]}

Shin, Hyun Soo ^{[1
]}

Ahn, Byung Du ^{[1
]}

Kim, Kyung Ho ^{[1
]}

Park, Won Jun ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 01期

关键词：

annealing; crystallisation; gallium compounds; grain size; indium compounds; nanostructured materials; semiconductor thin films; spin coating; surface morphology; thin film transistors; ZINC-OXIDE;

D O I：

10.1149/1.2976027

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Solution-processed indium gallium zinc oxide (IGZO) thin films as an active channel layer in thin-film transistors (TFTs) were successfully prepared by a spin-coating method using acetate- and nitrate-based precursors. In the range of 60-130 degrees C, indium, gallium, and zinc precursors were dissociated and then hydrolyzed to metal hydroxides. InGaZn2O5 compound was synthesized at similar to 196 degrees C and crystallized at 305-420 degrees C. A spin-coated IGZO film annealed at 450 degrees C had smooth morphology and fine grains with an average size of similar to 15 nm. In solution-processed IGZO TFTs using nanocrystalline films prepared at 450 degrees C, the on-to-off ratio, a field effect mobility, and the subthreshold swing voltage were similar to 10(6), 0.96 cm(2)/V s, and 1.39 V/decade, respectively.

引用

页码：H7 / H9

页数：3

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