Monolithic super-bright red resonant cavity light-emitting diode grown by solid source molecular beam epitaxy

被引：15

作者：

Jalonen, M ^{[1
]}

Kongas, J ^{[1
]}

Toivonen, M ^{[1
]}

Savolainen, P ^{[1
]}

Salokatve, A ^{[1
]}

Pessa, M ^{[1
]}

机构：

[1] Tampere Univ Technol, Semilab, Dept Phys, FIN-33101 Tampere, Finland

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 07期

基金：

芬兰科学院;

关键词：

epitaxial growth; Fabry-Perot resonators; light-emitting diode; optical communication; quantum-well devices; resonance;

D O I：

10.1109/68.681271

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Monolithic super-bright resonant-cavity light-emitting diode operating at lambda = 663 nm has been developed. The diode consisted of a 1 lambda-thick AlGaInP active region sandwiched between AlAs-AlGaAs distributed Bragg reflectors. The device structure was grown by solid source molecular beam epitaxy, The current aperture of the emitter was created by lateral selective wet thermal oxidation. A record-high peak wall-plug efficiency of 2.2% and a continuous-wave output power of 1.4 mW were attained without heatsinking at room temperature from a diode having a diameter of 80 mu m. The emission linewidth was as narrow as 4.5 mm.

引用

页码：923 / 925

页数：3

共 11 条

[1] Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers [J].

Chow, WW ;

Choquette, KD ;

Crawford, MH ;

Lear, KL ;

Hadley, GR .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1997, 33 (10) :1810-1824

[2] Recycling of guided mode light emission in planar microcavity light emitting diodes [J].

DeNeve, H ;

Blondelle, J ;

VanDaele, P ;

Demeester, P ;

Baets, R ;

Borghs, G .

APPLIED PHYSICS LETTERS, 1997, 70 (07) :799-801

[3] Fabrication issues of oxide-confined VCSELs [J].

Geib, KM ;

Choquette, KD ;

Hou, HQ ;

Hammons, BE .

VERTICAL-CAVITY SURFACE-EMITTING LASERS, 1997, 303 :69-74

[4] Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy [J].

Jalonen, M ;

Toivonen, M ;

Savolainen, P ;

Kongas, J ;

Pessa, M .

APPLIED PHYSICS LETTERS, 1997, 71 (04) :479-481

[5] Oxide-confined resonant cavity red light-emitting diode grown by solid source molecular beam epitaxy [J].

Jalonen, M ;

Toivonen, M ;

Kongas, J ;

Salokatve, A ;

Pessa, M .

ELECTRONICS LETTERS, 1997, 33 (23) :1989-1990

[6] VISIBLE (660 NM) RESONANT CAVITY LIGHT-EMITTING-DIODES [J].

LOTT, JA ;

SCHNEIDER, RP ;

VAWTER, GA ;

ZOLPER, JC ;

MALLOY, KJ .

ELECTRONICS LETTERS, 1993, 29 (04) :328-329

[7] ALGAINP VISIBLE RESONANT-CAVITY LIGHT-EMITTING-DIODES [J].

LOTT, JA ;

SCHNEIDER, RP ;

ZOLPER, JC ;

MALLOY, KJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1993, 5 (06) :631-633

[8]

Najda SP, 1996, SHARP TECH J, P31

[9] All-solid-source molecular beam epitaxy for growth of III-V compound semiconductors [J].

Pessa, M ;

Toivonen, M ;

Jalonen, M ;

Savolainen, P ;

Salokatve, A .

THIN SOLID FILMS, 1997, 306 (02) :237-243

[10] RESONANT CAVITY LIGHT-EMITTING DIODE [J].

SCHUBERT, EF ;

WANG, YH ;

CHO, AY ;

TU, LW ;

ZYDZIK, GJ .

APPLIED PHYSICS LETTERS, 1992, 60 (08) :921-923

← 1 2 →