Effects of rapid thermal annealing on GaInP/AlGaInP lasers grown by all-solid-source molecular beam epitaxy

被引：42

作者：

Jalonen, M

Toivonen, M

Savolainen, P

Kongas, J

Pessa, M

机构：

[1] Tampere University of Technology, Semilab, Department of Physics, FIN-33101 Tampere

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 04期

关键词：

D O I：

10.1063/1.119584

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have examined the influence of rapid thermal annealing on the performance characteristics of GaInP/AlGaInP quantum well lasers which were grown by all-solid-source molecular beam epitaxy. It was found that when the laser structures were annealed the threshold current densities of the lasers decreased significantly. This improvement in lasing performance could be associated with the possibility that annealing removed nonradiative recombination centers from the quantum wells. The emission wavelength, differential quantum efficiency, and characteristic temperature were not affected to any remarkable extent, indicating that the interdiffusion of group-III elements did not damage the structures. (C) 1997 American Institute of Physics.

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页码：479 / 481

页数：3

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