ALL-SOLID SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF STRAINED-LAYER INGAAS/GAINASP/GAINP QUANTUM-WELL LASERS (LAMBDA=980 NM)

被引：17

作者：

TOIVONEN, M

JALONEN, M

SALOKATVE, A

NAPPI, J

SAVOLAINEN, P

PESSA, M

ASONEN, H

机构：

[1] Tampere University of Technology, Department of Physics, FIN-33101 Tampere

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 16期

关键词：

D O I：

10.1063/1.114335

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the growth of 980-nm strained-layer InGaAs/GaInAsP/GaInP separated confinement quantum well lasers using all solid source molecular beam epitaxy. Valved cracker cells were employed for both phosphorus and arsenic. Fabricated lasers exhibited excellent performance that is comparable to similar lasers grown by gas source molecular beam epitaxy in our laboratory. A maximum output power of 450 mW and over 250 mW in single mode operation was achieved for ridge waveguide lasers with AR/HR coated facets. (C) 1995 American Institute of Physics.

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页码：2332 / 2334

页数：3

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