Piezoelectric properties of CaBi4Ti4O15 ferroelectric thin films investigated by atomic force microscopy

被引：14

作者：

Fu, DS ^{[1
]}

Suzuki, K ^{[1
]}

Kato, K ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Moriyama Ku, Nagoya, Aichi 4638560, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2003年 / 42卷 / 9B期

关键词：

piezoelectric; ferroelectric; atomic force microscopy (AFM); bismuth-layer-structured ferroelectric thin film;

D O I：

10.1143/JJAP.42.5994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic force microscopy, (AFM) is used to probe the local piezoelectric properties of CaBi4Ti4O15 (CBT) bismuth-layerstructured ferroelectric thin films. Calibration with Z-cut LaTiO3 and X-cut quartz crystals shows that a conductive AFM tip can be employed as a top electrode to accurately evaluate the piezoelectric displacement in ferroelectric materials without a top electrode. Our measurements on individual grains in CBT film clearly reveal that the local piezoelectric properties are determined by the polarization state in the grain. In a grain with a polar axis very close to the normal direction, a piezoelectric coefficient of 16 pm/V was attained after poling.

引用

页码：5994 / 5997

页数：4

共 19 条

[1] Piezoelectric measurements with atomic force microscopy [J].

Christman, JA ;

Woolcott, RR ;

Kingon, AI ;

Nemanich, RJ .

APPLIED PHYSICS LETTERS, 1998, 73 (26) :3851-3853

[2] High-piezoelectric behavior of c-axis-oriented lead zirconate titanate thin films with composition near the morphotropic phase boundary [J].

Fu, DS ;

Suzuki, H ;

Ogawa, T ;

Ishikawa, K .

APPLIED PHYSICS LETTERS, 2002, 80 (19) :3572-3574

[3] Investigation of domain switching and retention in oriented PbZr0.3Ti0.7O3 thin film by scanning force microscopy [J].

Fu, DS ;

Suzuki, K ;

Kato, K ;

Minakata, M ;

Suzuki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (11B) :6724-6729

[4] Dynamics of nanoscale polarization backswitching in tetragonal lead zirconate titanate thin film [J].

Fu, DS ;

Suzuki, K ;

Kato, K ;

Suzuki, H .

APPLIED PHYSICS LETTERS, 2003, 82 (13) :2130-2132

[5] Local piezoelectric response in bismuth-based ferroelectric thin films investigated by scanning force microscopy [J].

Fu, DS ;

Suzuki, K ;

Kato, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (10A) :L1103-L1105

[6] Long-time piezoelectric relaxation in lead zirconate titanate thin film [J].

Fu, DS ;

Ishikawa, K ;

Yoshimi, Y ;

Suzuki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (5B) :L580-L582

[7] Observation of piezoelectric relaxation in ferroelectric thin films by continuous charge integration [J].

Fu, DS ;

Ishikawa, K ;

Minakata, M ;

Suzuki, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (9B) :5683-5686

[8]

FU DS, 2003, IN PRESS FERROELECTR

[9] Imaging and control of domain structures in ferroelectric thin films via scanning force microscopy [J].

Gruverman, A ;

Auciello, O ;

Tokumoto, H .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1998, 28 :101-123

[10] Quantitative ferroelectric characterization of single submicron grains in Bi-layered perovskite thin films [J].

Harnagea, C ;

Pignolet, A ;

Alexe, M ;

Hesse, D ;

Gösele, U .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 70 (03) :261-267

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