Metal silicides: An integral part of microelectronics

被引：144

作者：

Chen, LJ ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan

来源：

JOM | 2005年 / 57卷 / 09期

关键词：

D O I：

10.1007/s11837-005-0111-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This article presents an overview of the recent developments in the fundamental understandings and microelectronics applications of metal silicides. The synthesis and characterization of nanoscale silicides with potential applications in nanotechnology are reviewed.

引用

页码：24 / 30

页数：7

共 55 条

[1]

[Anonymous], INT TECHN ROADM SEM

[2] Stress-induced shape transition of CoSi2 clusters on Si(100) [J].

Brongersma, SH ;

Castell, MR ;

Perovic, DD ;

Zinke-Allmang, M .

PHYSICAL REVIEW LETTERS, 1998, 80 (17) :3795-3798

[3] Growth of self-aligned crystalline cobalt silicide nanostructures from Co nanoparticles [J].

Carter, JD ;

Cheng, GJ ;

Guo, T .

JOURNAL OF PHYSICAL CHEMISTRY B, 2004, 108 (22) :6901-6904

[4] FORMATION OF EPITAXIAL NISI2 OF SINGLE ORIENTATION ON(111) SI INSIDE MINIATURE SIZE OXIDE OPENINGS [J].

CHANG, CS ;

NIEH, CW ;

CHEN, LJ .

APPLIED PHYSICS LETTERS, 1987, 50 (05) :259-261

[5] Fonnation of epitaxial β-FeSi2 nanodots array on strained Si/Si0.8Ge0.2(001) substrate [J].

Chen, HC ;

Liao, KF ;

Lee, SW ;

Cheng, SL ;

Chen, LJ .

THIN SOLID FILMS, 2004, 461 (01) :44-47

[6]

Chen L. J., 2004, SILICIDE TECHNOLOGY

[7]

Chen LJ, 2004, ELEC SOC S, V2004, P241

[8] EFFECTS OF IMPLANTATION IMPURITIES AND SUBSTRATE CRYSTALLINITY ON THE FORMATION OF NISI2 ON SILICON AT 200-280-DEGREES-C [J].

CHEN, LJ ;

DOLAND, CM ;

WU, IW ;

CHU, JJ ;

LU, SW .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (07) :2789-2792

[9] EPITAXIAL-GROWTH OF TRANSITION-METAL SILICIDES ON SILICON [J].

CHEN, LJ ;

TU, KN .

MATERIALS SCIENCE REPORTS, 1991, 6 (2-3) :53-140

[10] Solid state amorphization in metal/Si systems [J].

Chen, LJ .

MATERIALS SCIENCE & ENGINEERING R-REPORTS, 2000, 29 (05) :115-152

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