EFFECTS OF IMPLANTATION IMPURITIES AND SUBSTRATE CRYSTALLINITY ON THE FORMATION OF NISI2 ON SILICON AT 200-280-DEGREES-C

被引：22

作者：

CHEN, LJ ^{[1
]}

DOLAND, CM ^{[1
]}

WU, IW ^{[1
]}

CHU, JJ ^{[1
]}

LU, SW ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 07期

关键词：

D O I：

10.1063/1.339408

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2789 / 2792

页数：4

共 16 条

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