Microscopic contact charging and dissipation

被引：15

作者：

Morita, S ^{[1
]}

Sugawara, Y ^{[1
]}

机构：

[1] Osaka Univ, Grad Sch Engn, Dept Elect Engn, Suita, Osaka 5650871, Japan

来源：

THIN SOLID FILMS | 2001年 / 393卷 / 1-2期

关键词：

atomic force microscopy (AFM); charging; contacts; silicon oxide; deposition process; surface diffusion;

D O I：

10.1016/S0040-6090(01)01102-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigated elementary processes of microscopic contact charging and charge dissipation on and in thin silicon oxide, using a reproducible and controllable contact charging method. As a result, we found that negative charges have three stages of contact charging and charge dissipation, while positive charges have only one stage. By continuing with the contact charging, negative charges became high density, i.e. a solid phase of charges, on the silicon oxide surface at room temperature in air. Furthermore, we succeeded in imaging point charges on n(+)-GaAs(110) cleaved surfaces with atomic resolution using a modified non-contact atomic force microscope. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：310 / 318

页数：9

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