Low-frequency noise and mobility fluctuations in AlGaN/GaN heterostructure field-effect transistors

被引：50

作者：

Garrido, JA

Foutz, BE

Smart, JA

Shealy, JR

Murphy, MJ

Schaff, WJ

Eastman, LF

Muñoz, E

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14853 USA

[2] Univ Politecn Madrid, ETSI Telecomun, Dept Ingn Elect, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126672

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The l/f low-frequency noise characteristics of AlGaN/GaN heterostructure held-effect transistors, grown on sapphire: and SiC substrates by molecular beam epitaxy and organometallic vapor phase epitaxy, are reported. The Hooge parameter is deduced taking into account the effect of the contact noise and the noise originating in the ungated regions. A strong dependence between the Hooge parameter and the sheet carrier density is obtained, and it is explained using a model in which mobility fluctuations are produced by dislocations. A Hooge parameter as low as alpha(CH)approximate to 8 x 10(-5) is determined for devices grown on SiC substrates. (C) 2000 American Institute of Physics. [S0003-6951(00)02623-1].

引用

收藏

页码：3442 / 3444

页数：3

相关论文

共 14 条

[1] Low flicker-noise GaN/AlGaN heterostructure field-effect transistors for microwave communications [J].

Balandin, A ;

Morozov, SV ;

Cai, S ;

Li, R ;

Wang, KL ;

Wijeratne, G ;

Viswanathan, CR .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (08) :1413-1417

[2] Photoconductive gain modelling of GaN photoconductors [J].

Garrido, JA ;

Monroy, E ;

Izpura, I ;

Munoz, E .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (06) :563-568

[3] Low frequency noise and screening effects in AlGaN/GaN HEMTs [J].

Garrido, JA ;

Calle, F ;

Muñoz, E ;

Izpura, I ;

Sánchez-Rojas, JL ;

Li, R ;

Wang, KL .

ELECTRONICS LETTERS, 1998, 34 (24) :2357-2359

[4] MOBILITY OF THE TWO-DIMENSIONAL ELECTRON-GAS AT SELECTIVITY DOPED N-TYPE ALXGA1-XAS/GAAS HETEROJUNCTIONS WITH CONTROLLED ELECTRON CONCENTRATIONS [J].

HIRAKAWA, K ;

SAKAKI, H .

PHYSICAL REVIEW B, 1986, 33 (12) :8291-8303

[5] 1-F NOISE [J].

HOOGE, FN .

PHYSICA B & C, 1976, 83 (01) :14-23

[6] INTERPRETATION OF HOOGE 1/F NOISE FORMULA [J].

KISS, LB ;

KLEINPENNING, TGM .

PHYSICA B & C, 1987, 145 (02) :185-189

[7] Low-frequency noise in AlGaN-GaN doped-channel heterostructure field effect transistors grown on insulating SiC substrates [J].

Kuksenkov, DV ;

Giudice, GE ;

Temkin, H ;

Gaska, R ;

Ping, A ;

Adesida, I .

ELECTRONICS LETTERS, 1998, 34 (23) :2274-2276

[8] AlGaN/GaN high electron mobility field effect transistors with low 1/f noise [J].

Levinshtein, ME ;

Rumyantsev, SL ;

Gaska, R ;

Yang, JW ;

Shur, MS .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1089-1091

[9] 1/F NOISE FROM LEVELS IN A LINEAR OR PLANAR ARRAY .3. TRAPPED CARRIER FLUCTUATIONS AT DISLOCATIONS [J].

MORRISON, SR .

JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) :4104-4112

[10] Molecular beam epitaxial growth of normal and inverted two-dimensional electron gases in AlGaN GaN based heterostructures [J].

Murphy, MJ ;

Chu, K ;

Wu, H ;

Yeo, W ;

Schaff, WJ ;

Ambacher, O ;

Smart, J ;

Shealy, JR ;

Eastman, LF ;

Eustis, TJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (03) :1252-1254