Kinetics of nickel-induced lateral crystallization of amorphous silicon thin-film transistors by rapid thermal and furnace anneals

被引：36

作者：

Lam, LK ^{[1
]}

Chen, SK ^{[1
]}

Ast, DG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 13期

关键词：

D O I：

10.1063/1.123695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The activation energy for nickel-induced lateral crystallization of amorphous silicon heated in an inert atmosphere was investigated, and was found to be 1.75 eV for rapid thermal annealing and 1.86 eV for furnace annealing. Polycrystalline silicon thin-film transistors fabricated in furnace recrystallized and rapid thermal recrystallized material had similar device characteristics, even though the crystallization velocity differed by a factor of 3. (C) 1999 American Institute of Physics.

引用

页码：1866 / 1868

页数：3

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