Ultrahigh Al Schottky barrier to p-Si

被引：7

作者：

Horváth, ZJ ^{[1
]}

Adám, M ^{[1
]}

Van Tuyen, V ^{[1
]}

Dücso, C ^{[1
]}

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest 114, Hungary

来源：

ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ASDAM.1998.730172

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The possibility of barrier height enhancement of Schottky junctions on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si.

引用

页码：83 / 86

页数：4

共 25 条

[1] SCHOTTKY-BARRIER HEIGHTS OF TI AND TISI2 ON N-TYPE AND P-TYPE SI(100) [J].

ABOELFOTOH, MO ;

TU, KN .

PHYSICAL REVIEW B, 1986, 34 (04) :2311-2318

[2] TEMPERATURE-DEPENDENCE OF THE SCHOTTKY-BARRIER HEIGHT OF TUNGSTEN ON N-TYPE AND P-TYPE SILICON [J].

ABOELFOTOH, MO .

SOLID-STATE ELECTRONICS, 1991, 34 (01) :51-55

[3] FORMATION OF NISI AND CURRENT TRANSPORT ACROSS NISI-SI INTERFACE [J].

ANDREWS, JM ;

KOCH, FB .

SOLID-STATE ELECTRONICS, 1971, 14 (10) :901-&

[4] INFLUENCE OF LOW-ENERGY ATOMIC-HYDROGEN ON ARGON-IMPLANTED SILICON SCHOTTKY BARRIERS [J].

ASHOK, S ;

GIEWONT, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (07) :L533-L535

[5] HIGH-BARRIER AL/P-SI SCHOTTKY DIODES [J].

ASHOK, S ;

GIEWONT, K .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (09) :462-464

[6]

BATH VK, 1998, PHYSICS SEMICONDUCTO, P599

[7] A STUDY OF VANADIUM AS DIFFUSION BARRIER BETWEEN ALUMINUM AND GADOLINIUM SILICIDE CONTACTS [J].

EIZENBERG, M ;

THOMPSON, RD ;

TU, KN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :6891-6897

[8] CURRENT-VOLTAGE CHARACTERISTIC OF TI-PSI METAL-OXIDE-SEMICONDUCTOR DIODES [J].

HANSELAER, PL ;

LAFLERE, WH ;

VANMEIRHAEGHE, RL ;

CARDON, F .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (08) :2309-2314

[9] EFFECT OF CRYSTALLIZATION ON THE ELECTRICAL AND INTERFACE CHARACTERISTICS OF GDSI2/P-SI SCHOTTKY JUNCTIONS [J].

HORVATH, ZJ ;

MOLNAR, G ;

KOVACS, B ;

PETO, G ;

ANDRASI, M ;

SZENTPALI, B .

JOURNAL OF CRYSTAL GROWTH, 1993, 126 (01) :163-167

[10] Anomalous temperature dependence of series resistance in Ag/Si and Al/Si Schottky junctions [J].

Horvath, ZJ ;

Adam, M ;

Pinter, I ;

Cvikl, B ;

Korosak, D ;

Mrdjen, T ;

Tuyen, VV ;

Makaro, Z ;

Ducso, C ;

Barsony, I .

VACUUM, 1998, 50 (3-4) :417-419

← 1 2 3 →