Tensile-mode fatigue testing of silicon films as structural materials for MEMS

被引：111

作者：

Ando, T ^{[1
]}

Shikida, M ^{[1
]}

Sato, K ^{[1
]}

机构：

[1] Nagoya Univ, Dept Micro Syst Engn, Nagoya, Aichi 4648603, Japan

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2001年 / 93卷 / 01期

关键词：

tensile-mode; fatigue; thin-film; single-crystal-silicon; MEMS;

D O I：

10.1016/S0924-4247(01)00623-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new technique for the fatigue testing of thin-films under an approximately uniaxial tensile condition is presented. A perfect grip on both ends of the specimen was achieved by using a silicon device which integrated the specimen and loading system on the same chip. Low-cycle fatigue testing was carried out by controlling the strain applied to the specimen. Test materials were single-crystal-silicon specimens 50 mum long, 50 mum wide, and 5 mum thick with axes aligned in three different orientations. Differences between the number of cycles to failure were observed as differences in the amplitudes of the applied strains. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：70 / 75

页数：6

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