Low-temperature crystallization of amorphous silicon using atomic hydrogen generated by catalytic reaction on heated tungsten

被引：69

作者：

Heya, A ^{[1
]}

Masuda, A ^{[1
]}

Matsumura, H ^{[1
]}

机构：

[1] JAIST, Tatsunokuchi, Ishikawa 9231292, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 15期

关键词：

D O I：

10.1063/1.123782

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A method for crystallizing amorphous silicon (a-Si) films at low temperatures is proposed. In the method, a-Si films are crystallized at temperatures lower than 400 degrees C by annealing in the presence of atomic hydrogen. The hydrogen atoms are generated by catalytic cracking reaction of H-2 gas on a heated tungsten catalyzer in the catalytic chemical vapor deposition apparatus. It is found that the crystalline fraction of such an a-Si film is increased from 0% to several tens %, and at the same time the a-Si film itself is etched with the rate of several tens nm/min by annealing in atomic hydrogen. This increment of crystalline fraction appears dependent on the quality of initial a-Si films. It is implied that there are several types of a-Si even if the difference among a-Si films cannot be detected by Raman scattering spectroscopy and other means for measurements. (C) 1999 American Institute of Physics. [S0003-6951(99)01415-1].

引用

页码：2143 / 2145

页数：3

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