Organic semiconductor memory devices based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties

被引：27

作者：

Xu, Xinjun ^{[1
]}

Li, Lidong ^{[1
]}

Liu, Bo ^{[2
]}

Zou, Yingping ^{[2
]}

机构：

[1] Univ Sci & Technol Beijing, State Key Lab Adv Met & Mat, Sch Mat Sci & Engn, Beijing 100083, Peoples R China

[2] Cent S Univ, Coll Chem & Chem Engn, Changsha 410083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 06期

基金：

中国国家自然科学基金;

关键词：

CONJUGATED COPOLYMER; CONDUCTING POLYMERS; NANOPARTICLES; BISTABILITY; PERFORMANCE; FILMS;

D O I：

10.1063/1.3554756

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polyfluorene and its derivatives are good candidates to fabricate single-component polymer memories. However, the reported polyfluorenes for use in memories all have a big band gap and exhibit an absorption peak near the ultraviolet region. We report here organic memories based on a low-band gap polyfluorene derivative with isoindigo as electron-trapping moieties to improve on/off ratios. Also, possible factors which may influence the performance of polymer memory devices are investigated and feasible approaches for improving device performance are provided. (C) 2011 American Institute of Physics. [doi:10.1063/1.3554756]

引用

页数：3

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