The study of electrical characteristics of heterojunction based on ZnO nanowires using ultrahigh-vacuum conducting atomic force microscopy

被引：63

作者：

He, J. H. ^{[1
]}

Ho, C. H.

机构：

[1] Natl Taiwan Univ, Inst Photon & Optoelect, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

关键词：

D O I：

10.1063/1.2821831

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical performances of the heterojunction of n-ZnO nanowires with p-Si substrate at the nanometer scale have been characterized using an ultrahigh-vacuum conducting atomic force microscopy. Compared with the expected values of 1.0-2.0 reported in p-n junction in the previous studies, the abnormally high diode ideality factor (> 2) was obtained. It elucidates that a ZnO-Si p-n junction can be modeled by a series of diodes, the actual ZnO-Si junction diode and two Schottky diodes at the metal/ZnO and metal/Si junctions. The tunneling across p-n junction would also play a role in the externally measured high ideality factor. (c) 2007 American Institute of Physics.

引用

页数：3

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