Visible-Color-Tunable Light-Emitting Diodes

被引：282

作者：

Hong, Young Joon ^{[1
,2
,3
]}

Lee, Chul-Ho ^{[1
,2
,3
]}

Yoon, Aram ^{[4
]}

Kim, Miyoung ^{[4
]}

Seong, Han-Kyu ^{[5
]}

Chung, Hun Jae ^{[5
]}

Sone, Cheolsoo ^{[5
]}

Park, Yong Jo ^{[5
]}

Yi, Gyu-Chul ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Seoul 151747, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea

[4] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea

[5] Samsung LED Co Ltd, R&D Ctr, Suwon 443744, South Korea

来源：

ADVANCED MATERIALS | 2011年 / 23卷 / 29期

关键词：

MULTIQUANTUM-WELL; GROWTH; EMISSION; DEVICES; NANOSTRUCTURES; SEMICONDUCTORS; TEMPERATURE; NANORODS; SINGLE; FILMS;

D O I：

10.1002/adma.201100806

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Visible-color-tunable light-emitting diodes (LEDs) with electroluminescent color that changes continuously from red to blue by adjusting the external electric bias are fabricated using multifacetted GaN nanorods with anisotropically formed 3D InGaN multiple-quantum wells. Monolithically integrated red, green, and blue LEDs on a single substrate, operating at a fixed drive current, are also demonstrated for inorganic full-color LED display applications.

引用

页码：3284 / +

页数：6

共 30 条

[1] Heteroepitaxial growth of high-quality GaN thin films on Si substrates coated with self-assembled sub-micrometer-sized silica balls [J].