Visible-Color-Tunable Light-Emitting Diodes

被引:282
作者
Hong, Young Joon [1 ,2 ,3 ]
Lee, Chul-Ho [1 ,2 ,3 ]
Yoon, Aram [4 ]
Kim, Miyoung [4 ]
Seong, Han-Kyu [5 ]
Chung, Hun Jae [5 ]
Sone, Cheolsoo [5 ]
Park, Yong Jo [5 ]
Yi, Gyu-Chul [1 ,2 ]
机构
[1] Seoul Natl Univ, Natl Creat Res Initiat Ctr Semicond Nanorods, Seoul 151747, South Korea
[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151747, South Korea
[3] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, Pohang 790784, Gyeongbuk, South Korea
[4] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[5] Samsung LED Co Ltd, R&D Ctr, Suwon 443744, South Korea
关键词
MULTIQUANTUM-WELL; GROWTH; EMISSION; DEVICES; NANOSTRUCTURES; SEMICONDUCTORS; TEMPERATURE; NANORODS; SINGLE; FILMS;
D O I
10.1002/adma.201100806
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Visible-color-tunable light-emitting diodes (LEDs) with electroluminescent color that changes continuously from red to blue by adjusting the external electric bias are fabricated using multifacetted GaN nanorods with anisotropically formed 3D InGaN multiple-quantum wells. Monolithically integrated red, green, and blue LEDs on a single substrate, operating at a fixed drive current, are also demonstrated for inorganic full-color LED display applications.
引用
收藏
页码:3284 / +
页数:6
相关论文
共 30 条
[11]   Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO) [J].
Hiramatsu, K ;
Nishiyama, K ;
Onishi, M ;
Mizutani, H ;
Narukawa, M ;
Motogaito, A ;
Miyake, H ;
Iyechika, Y ;
Maeda, T .
JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) :316-326
[12]   Position-controlled selective growth of ZnO nanorods on Si substrates using facet-controlled GaN micropatterns [J].
Hong, Young Joon ;
An, Sung Jin ;
Jung, Hye Seong ;
Lee, Chul-Ho ;
Yi, Gyu-Chul .
ADVANCED MATERIALS, 2007, 19 (24) :4416-+
[13]   Controlled epitaxial growth modes of ZnO nanostructures using different substrate crystal planes [J].
Hong, Young Joon ;
Yoo, Jinkyoung ;
Doh, Yong-Joo ;
Kang, Suk Hoon ;
Kong, Ki-jeong ;
Kim, Miyoung ;
Lee, Dong Ryeol ;
Oh, Kyu Hwan ;
Yi, Gyu-Chul .
JOURNAL OF MATERIALS CHEMISTRY, 2009, 19 (07) :941-947
[14]   Growth and characterization of InxGa1-xN MQW using a novel method of temperature gradient OMVPE [J].
Johnson, MC ;
Jorgenson, RJ ;
Wu, J ;
Shan, W ;
Bourret-Courchesne, E .
JOURNAL OF CRYSTAL GROWTH, 2004, 261 (01) :44-49
[15]   Status and future of high-power light-emitting diodes for solid-state lighting [J].
Krames, Michael R. ;
Shchekin, Oleg B. ;
Mueller-Mach, Regina ;
Mueller, Gerd O. ;
Zhou, Ling ;
Harbers, Gerard ;
Craford, M. George .
JOURNAL OF DISPLAY TECHNOLOGY, 2007, 3 (02) :160-175
[16]   GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays [J].
Lee, Chul-Ho ;
Yoo, Jinkyoung ;
Hong, Young Joon ;
Cho, Jeonghui ;
Kim, Yong-Jin ;
Jeon, Seong-Ran ;
Baek, Jong Hyeob ;
Yi, Gyu-Chul .
APPLIED PHYSICS LETTERS, 2009, 94 (21)
[17]   Carrier dynamics in nitride-based light-emitting p-n junction diodes with two active regions emitting at different wavelengths [J].
Li, YL ;
Gessmann, T ;
Schubert, EF ;
Sheu, JK .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) :2167-2172
[18]   InGaN/GaN nanorod array white light-emitting diode [J].
Lin, Hon-Way ;
Lu, Yu-Jung ;
Chen, Hung-Ying ;
Lee, Hong-Mao ;
Gwo, Shangjr .
APPLIED PHYSICS LETTERS, 2010, 97 (07)
[19]   The roles of structural imperfections in InGaN-Based blue light-emitting diodes and laser diodes [J].
Nakamura, S .
SCIENCE, 1998, 281 (5379) :956-961
[20]   Scanning field emission from patterned carbon nanotube films [J].
Nilsson, L ;
Groening, O ;
Emmenegger, C ;
Kuettel, O ;
Schaller, E ;
Schlapbach, L ;
Kind, H ;
Bonard, JM ;
Kern, K .
APPLIED PHYSICS LETTERS, 2000, 76 (15) :2071-2073