Solar-blind 4.55 eV band gap Mg0.55Zn0.45O components fabricated using quasi-homo buffers

被引:53
作者
Liu, Z. L. [1 ]
Mei, Z. X. [1 ]
Zhang, T. C. [1 ]
Liu, Y. P. [1 ]
Guo, Y. [1 ]
Du, X. L. [1 ]
Hallen, A. [2 ]
Zhu, J. J. [3 ]
Kuznetsov, A. Yu. [3 ]
机构
[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China
[2] Royal Inst Technol, Dept Microelect & IT, Lab Mat & Semicond Phys, SE-16440 Kista, Sweden
[3] Univ Oslo, Dept Phys, NO-0316 Oslo, Norway
基金
美国国家科学基金会;
关键词
Phase separation; Solar-blind; Molecular beam epitaxy; MgZnO; ZnO; MGXZN1-XO;
D O I
10.1016/j.jcrysgro.2009.07.030
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
A route for synthesizing high Mg content single-phase wurtzite MgZnO films having band gaps in the solar-blind region is demonstrated by employing molecular beam epitaxy on Al2O3 substrates. Importantly, a low Mg content "quasi-homo" buffer, Mg0.17Zn0.83O, was applied to accommodate a host of structural discrepancies and therefore, avoiding phase separation in a high Mg content film, Mg0.55Zn0.45O, as proved by X-ray diffraction. The Mg fraction in the overgrown single-phase epilayer, Mg0.55Zn0.45O, was confirmed by Rutherford backscattering spectrometry. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:4356 / 4359
页数:4
相关论文
共 18 条
[1]   High temperature excitonic stimulated emission from ZnO epitaxial layers [J].
Bagnall, DM ;
Chen, YF ;
Zhu, Z ;
Yao, T ;
Shen, MY ;
Goto, T .
APPLIED PHYSICS LETTERS, 1998, 73 (08) :1038-1040
[2]   Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].
Choopun, S ;
Vispute, RD ;
Yang, W ;
Sharma, RP ;
Venkatesan, T ;
Shen, H .
APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531
[3]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[4]   MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range [J].
Ju, Z. G. ;
Shan, C. X. ;
Jiang, D. Y. ;
Zhang, J. Y. ;
Yao, B. ;
Zhao, D. X. ;
Shen, D. Z. ;
Fan, X. W. .
APPLIED PHYSICS LETTERS, 2008, 93 (17)
[5]   Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate [J].
Mei, ZX ;
Wang, Y ;
Du, XL ;
Ying, MJ ;
Zeng, ZQ ;
Zheng, H ;
Jia, JF ;
Xue, QK ;
Zhang, Z .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) :7108-7111
[6]   Wide-bandgap semiconductor ultraviolet photodetectors [J].
Monroy, E ;
Omnès, F ;
Calle, F .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2003, 18 (04) :R33-R51
[7]  
Morkoç H, 1999, MRS INTERNET J N S R, V4
[8]   Structure and optical properties of ZnO/Mg0.2Zn0.8O superlattices [J].
Ohtomo, A ;
Kawasaki, M ;
Ohkubo, I ;
Koinuma, H ;
Yasuda, T ;
Segawa, Y .
APPLIED PHYSICS LETTERS, 1999, 75 (07) :980-982
[9]   MgxZn1-xO as a II-VI widegap semiconductor alloy [J].
Ohtomo, A ;
Kawasaki, M ;
Koida, T ;
Masubuchi, K ;
Koinuma, H ;
Sakurai, Y ;
Yoshida, Y ;
Yasuda, T ;
Segawa, Y .
APPLIED PHYSICS LETTERS, 1998, 72 (19) :2466-2468
[10]   Microstructure and electronic properties of InGaN alloys [J].
Ponce, FA ;
Srinivasan, S ;
Bell, A ;
Geng, L ;
Liu, R ;
Stevens, M ;
Cai, J ;
Omiya, H ;
Marui, H ;
Tanaka, S .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2003, 240 (02) :273-284