High speed silicon photonic crystal waveguide modulator for low voltage operation

被引:123
作者
Gu, Lanlan [1 ]
Jiang, Wei [1 ]
Chen, Xiaonan [1 ]
Wang, Li [1 ]
Chen, Ray T. [1 ]
机构
[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA
关键词
D O I
10.1063/1.2475580
中图分类号
O59 [应用物理学];
学科分类号
摘要
A high speed compact silicon modulator is experimentally demonstrated to work at a low driving voltage desirable for on-chip applications. As carrier injection is the only practical option for optical modulation in silicon, a lower limit of current density (similar to 10(4) A/cm(2)) exists for achieving gigahertz modulation in the p-i-n diode configuration. Exploiting the slow group velocity of light in photonic crystal waveguides, the interaction length of this Mach-Zehnder interferometer-type silicon modulator is reduced significantly compared to conventional modulators. The required high current density is achieved with a low voltage (2 V) by scaling down the interaction length to 80 mu m. (c) 2007 American Institute of Physics.
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页数:3
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