Interaction of organic surfaces with active species in the high-vacuum environment

被引:27
作者
Podzorov, V
Menard, E
Pereversev, S
Yakshinsky, B
Madey, T
Rogers, JA
Gershenson, ME
机构
[1] Rutgers State Univ, Dept Phys & Astron, Piscataway, NJ 08854 USA
[2] Univ Illinois, Dept Mat Sci & Engn, Urbana, IL 61801 USA
基金
美国国家科学基金会;
关键词
D O I
10.1063/1.2035323
中图分类号
O59 [应用物理学];
学科分类号
摘要
Using single-crystal organic field-effect transistors with the conduction channel exposed to environmental agents, we have observed generation of electronic defects at the organic surface in the high-vacuum environment. Rapid decrease of the source-drain current of an operating device is observed upon exposure of the channel to the species generated by high-vacuum gauges. We attribute this effect to interaction of the organic surface with electrically neutral free radicals produced in the process of hydrocarbon cracking on hot filaments with a relatively low activation energy E(a)similar to 2.5 eV (240 kJ/mol). The reported results might be important for optimizing the high-vacuum processes of fabrication and characterization of a wide range of organic and molecular electronic devices. (c) 2005 American Institute of Physics.
引用
收藏
页数:3
相关论文
共 20 条
[11]  
MULDER C, UNPUB
[12]   Photochemistry without light:: Oxidation of rubrene in a microemulsion with a chemical source of singlet molecular oxygen (1O2, 1Δg) [J].
Nardello, V ;
Marti, MJ ;
Pierlot, C ;
Aubry, JM .
JOURNAL OF CHEMICAL EDUCATION, 1999, 76 (09) :1285-1288
[13]   Temperature-independent transport in high-mobility pentacene transistors [J].
Nelson, SF ;
Lin, YY ;
Gundlach, DJ ;
Jackson, TN .
APPLIED PHYSICS LETTERS, 1998, 72 (15) :1854-1856
[14]   Intrinsic charge transport on the surface of organic semiconductors [J].
Podzorov, V ;
Menard, E ;
Borissov, A ;
Kiryukhin, V ;
Rogers, JA ;
Gershenson, ME .
PHYSICAL REVIEW LETTERS, 2004, 93 (08) :086602-1
[15]   Light-induced switching in back-gated organic transistors with built-in conduction channel [J].
Podzorov, V ;
Pudalov, VM ;
Gershenson, ME .
APPLIED PHYSICS LETTERS, 2004, 85 (24) :6039-6041
[16]   Single-crystal organic field effect transistors with the hole mobility ∼8 cm2/V s [J].
Podzorov, V ;
Sysoev, SE ;
Loginova, E ;
Pudalov, VM ;
Gershenson, ME .
APPLIED PHYSICS LETTERS, 2003, 83 (17) :3504-3506
[17]   Field-effect transistors on rubrene single crystals with parylene gate insulator [J].
Podzorov, V ;
Pudalov, VM ;
Gershenson, ME .
APPLIED PHYSICS LETTERS, 2003, 82 (11) :1739-1741
[18]   Light-induced bias stress reversal in polyfluorene thin-film transistors [J].
Salleo, A ;
Street, RA .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (01) :471-479
[19]   Vapor sensing with α,ω-dihexylquarterthiophene field-effect transistors:: The role of grain boundaries [J].
Someya, T ;
Katz, HE ;
Gelperin, A ;
Lovinger, AJ ;
Dodabalapur, A .
APPLIED PHYSICS LETTERS, 2002, 81 (16) :3079-3081
[20]   Humidity sensors based on pentacene thin-film transistors [J].
Zhu, ZT ;
Mason, JT ;
Dieckmann, R ;
Malliaras, GG .
APPLIED PHYSICS LETTERS, 2002, 81 (24) :4643-4645