One-step synthesis and optical and electrical properties of thin film Cu3BiS3 for use as a solar absorber in photovoltaic devices

被引：94

作者：

Gerein, Nathan J. ^{[1
]}

Haber, Joel A. ^{[1
]}

机构：

[1] Univ Alberta, Dept Chem, Edmonton, AB T6G 2G2, Canada

来源：

CHEMISTRY OF MATERIALS | 2006年 / 18卷 / 26期

关键词：

D O I：

10.1021/cm061453r

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have synthesized Cu3BiS3 thin films on fused silica substrates in a one-step process by reactive sputter deposition of Cu-S and Bi on hot substrates. This one-step process produces films that are crystalline, phase-pure, dense, smooth, and continuous. As-deposited films have a direct forbidden band gap of 1.4 eV, an optical absorption coefficient of 1 x 10(5) cm(-1) at 1.9 eV, p-type conductivity, and an electrical resistivity of 84 Omega center dot cm. Postdeposition annealing in an H2S atmosphere increases crystallite size and reduces electrical resistivity of films to 9.6 Omega cm.

引用

页码：6297 / 6302

页数：6

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