Visible spectrum (654 nm) room temperature continuous wave InP quantum dot coupled to InGaP quantum well InP-InGaP-In(AlGa)P-InAlP heterostructure laser

被引：14

作者：

Walter, G ^{[1
]}

Holonyak, N

Heller, RD

Dupuis, RD

机构：

[1] Univ Illinois, Elect Engn Res Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Ctr Compound Semicond Microelect, Urbana, IL 61801 USA

[3] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1526454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Data are presented demonstrating the cw 300 K visible spectrum (654 nm) laser operation of a single 7.5 monolayer InP quantum dot (QD) layer coupled by a 20 Angstrom In0.5Al0.3Ga0.2P barrier to an auxiliary 70 A In0.5Ga0.5P quantum well (QW) that, via resonant tunneling, assists carrier collection, thermalization, and lateral rearrangement in the QDs. The simple stripe-geometry (530 mumx10 mum) InP QD+InGaP QW heterostructure laser, enhanced by the QW and operating on an upper QD state (42% quantum efficiency), is capable of over 10 mW/facet cw 300 K operation in spite of the weak heat sinking of probe operation. (C) 2002 American Institute of Physics.

引用

页码：4604 / 4606

页数：3

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