Defect formation in hafnium dioxide thin films

被引：34

作者：

Reicher, D

Black, P

Jungling, K

机构：

[1] S Syst Corp, Opt Coating & Component Evaluat Lab, Albuquerque, NM 87119 USA

[2] Boeing RTS, Opt Coating & Component Evaluat Lab, Albuquerque, NM 87185 USA

[3] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87131 USA

来源：

APPLIED OPTICS | 2000年 / 39卷 / 10期

关键词：

D O I：

10.1364/AO.39.001589

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Hafnium dioxide thin films were deposited by reactive electron-beam evaporation at six different substrate temperatures on fused-silica substrates. During the depositions, the scattering of light caused by the growth of defects in the films was recorded with in situ total internal reflection microscopy. After deposition the films were analyzed by angle-resolved scatterometery, spectrophotometric measurement of film reflectance and transmittance, atomic force microscopy, and x-ray diffraction. We explore the effects of film defect formation on film optical properties and film surface topography using these data. (C) 2000 Optical Society of America.

引用

页码：1589 / 1599

页数：11

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