SnS thin films fabricated by pulsed and normal electrochemical deposition

被引：64

作者：

Takeuchi, K

Ichimura, M ^{[1
]}

Arai, E

Yamazaki, Y

机构：

[1] Nagoya Inst Technol, Dept Elect & Comp Engn, Showa Ku, Nagoya, Aichi 4668555, Japan

[2] Fuji Xerox Co Ltd, Intelligent Device Lab, Kanagawa 2500111, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2003年 / 75卷 / 3-4期

关键词：

SnS; electrochemical deposition; pulse; morphology; X-ray diffraction;

D O I：

10.1016/S0927-0248(02)00192-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

SnS thin films were deposited onto Sn-doped In2O3-coated glass substrates by pulsed and normal electrochemical deposition (ECD) from aqueous solutions containing SnSO4 and Na2S2O3. Deposited SnS was polycrystalline and had orthorhombic structure, and its composition was S-rich. The films deposited by pulsed ECD were much denser and had smaller surface roughness than the films deposited by normal ECD. (C) 2002 Published by Elsevier Science B.V.

引用

页码：427 / 432

页数：6

共 8 条

[1]

FATOS E, 1984, J ELECTROCHEM SOC, V131, P2243

[2] Electrochemical deposition of SnS thin films [J].