High performance thin film transistor with cosputtered amorphous Zn-In-Sn-O channel: Combinatorial approach

被引：112

作者：

Ryu, Min Ki ^{[1
]}

Yang, Shinhyuk ^{[1
]}

Park, Sang-Hee Ko ^{[1
]}

Hwang, Chi-Sun ^{[1
]}

Jeong, Jae Kyeong ^{[2
]}

机构：

[1] ETRI, Transparent Elect Team, Taejon 305700, South Korea

[2] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 07期

关键词：

field effect transistors; II-VI semiconductors; indium compounds; interface states; sputter deposition; thin film transistors; tin compounds; wide band gap semiconductors; zinc compounds; CARRIER TRANSPORT; TEMPERATURE;

D O I：

10.1063/1.3206948

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin film transistors with a channel of Zn-In-Sn-O were fabricated via a combinatorial rf sputtering method. It was found that the role of the In atoms is to enhance the mobility and to shift the threshold voltage (V-th) negatively. On the other hand, the Sn fraction is critical for improving the overall trap density including the density-of-states of the bulk channel layer and the interfacial trap density at the ZnInSnO interface. The optimized transistor was obtained at a compositional ratio of Zn:In:Sn=40:20:40, which exhibited an excellent subthreshold gate swing of 0.12 V/decade, V-th of -0.4 V, and high I-on/off ratio of >10(9) as well as a high field-effect mobility of 24.6 cm(2)/V s.

引用

页数：3

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