Schottky-barrier carbon nanotube field-effect transistor modeling

被引：47

作者：

Hazeghi, Arash ^{[1
]}

Krishnamohan, Tejas

Wong, H. -S. Philip

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Engn, Stanford, CA 94305 USA

[3] Intel Corp, Santa Clara, CA 95052 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 03期

基金：

美国国家科学基金会;

关键词：

ballistic transport; carbon nanotube; CNFET; compact model; evanescent-mode analysis; field-effect transistor; mesoscopic scatterer; modeling; nanoelectronics; Schottky-barrier simulation;

D O I：

10.1109/TED.2006.890384

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The theoretical performance of carbon nanotube field-effect transistors (CNFETs) with Schottky barriers (SBs) is examined by means of a general ballistic model. A novel approach is used to treat the SBs at the metal-nanotube contacts as mesoscopic scatterers by modifying the distribution functions for carriers in the channel. Noticeable current reduction is observed compared to previous ballistic models without SBs. Evanescent-mode analysis is used to derive a scale length and the potential profile near the contacts for radially symmetric CNFET structures. Band-to-band tunneling current and ambipolar conduction are also treated. The effects of different device geometries and different nanotube chiralities on the drain-current are studied using this simple model. Quantum conductance degradation due to SBs is also observed.

引用

页码：439 / 445

页数：7

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