Highly strained very high-power laser diodes with InGaAs QWs

With the aim of realizing laser diodes in the wavelength range beyond 1100 nm oil GaAs, we have Studied the indium incorporation behaviour into pseudomorphic InGaAs-quantum wells with extremely high indium content grown by metalorganic vapour phase epitaxy. A wide growth temperature range between 490 C and 770 C as well as the dependence on V/III-ratio and strain compensation has been studied. At the maximum In-content of 41%, a photoluminescence wavelength of 1238 nm at room temperature is obtained. Laser diodes with in emission wavelength up to 1206 nm were processed. Structures with a slightly reduced In-content. emitting, at 1120 nm, were processed to broad-area devices (100mum x 1000mum) and show output powers up to 12W, which corresponds to a record high internal power density of 23MW/cm(2), with a good reliability. LOC structures with a reduced far field below 30 and a higher indium content emit 8.5 W at 1170 nm. (C) 2002 Elsevier Science B.V. All rights reserved.