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A novel measurement method of segregating adlayers in MBE

被引：6
作者：
Oehme, M
Bauer, M
Grasby, T
Kasper, E
机构：
[1] Univ Stuttgart, Inst Halbleitertech, D-70569 Stuttgart, Germany
[2] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England
来源：
THIN SOLID FILMS | 2000年 / 369卷 / 1-2期
关键词：
silicon molecular beam epitaxy; surface segregation; boron;
D O I：
10.1016/S0040-6090(00)00793-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel method for measurement of the adatom density of segregating dopant atoms is suggested. The determination of the surface density is completely based on post growth concentration profile measurements. The dependancies of the surface segregation ratio on different growth parameters can be extracted. The method was tested on the segregation of boron in silicon (100) molecular beam epitaxy. The strong decay of segregation with decreasing temperature was confirmed and quantified for a selected set of parameters. The boron segregation was shown to be also strongly dependant on doping concentration. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：138 / 142
页数：5
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