Bias-enhanced nucleation of diamond on silicon dioxide

被引：24

作者：

Irwin, MD ^{[1
]}

Pantano, CG ^{[1
]}

Gluche, P ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] UNIV ULM,DEPT ELECTRON DEVICES & CIRCUITS,D-89069 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.119839

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Characterization of amorphous SiO2 surfaces after biasing pretreatments, which induce nucleation of diamond, has been carried out using x-ray photoelectron spectroscopy and Raman spectroscopy. A mixture of silicon carbide, silicon oxycarbide, and diamond are formed upon exposure of biased SiO2 surfaces to a CH4+H-2 plasma used for diamond deposition. It is concluded that nucleation of diamond on amorphous SiO2 surfaces is promoted by formation of a SiC surface layer. Textured diamond films have been fabricated ou bulk SiO2 substrates using biasing pretreatments to induce diamond nucleation. (C) 1997 American Institute of Physics.

引用

页码：716 / 718

页数：3

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