The nucleation of highly oriented diamond on silicon via an alternating current substrate bias

被引：33

作者：

Wolter, SD ^{[1
]}

Borst, TH ^{[1
]}

Vescan, A ^{[1
]}

Kohn, E ^{[1
]}

机构：

[1] UNIV ULM,DEPT ELECTRON DEVICES & CIRCUITS,D-89069 ULM,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 25期

关键词：

D O I：

10.1063/1.116636

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new bias-enhanced nucleation method of forming highly oriented diamond on Si(100) is reported using an alternating current bias source. The percentage of aligned particles via alternating current bias-enhanced nucleation (ac BEN) was greater than 50%. This is compared to less than 10% highly oriented particles when using a conventional negative de substrate bias. Based on previous work in this area, the peak negative voltage portion of the ac wave form is believed to be responsible for enhancing diamond nucleation. The positive and moderate negative voltage portion of the ac wave form appears to aid the process of forming the highly oriented diamond. (C) 1995 American Institute of Physics.

引用

页码：3558 / 3560

页数：3

共 16 条

[1]

BACHMANN PK, 1988, MATER RES SOC S P, P99

[2] INVESTIGATION OF THE BIAS NUCLEATION PROCESS IN MICROWAVE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION OF DIAMOND [J].

BECKMANN, R ;

SOBISCH, B ;

KULISCH, W ;

RAU, C .

[3] EXPERIMENTAL CHARACTERIZATION OF BIAS-ENHANCED NUCLEATION OF DIAMOND ON SI [J].

GERBER, J ;

SATTEL, S ;

JUNG, K ;

EHRHARDT, H ;

ROBERTSON, J .

[4] EPITAXIAL DIAMOND THIN-FILMS ON (001) SILICON SUBSTRATES [J].

JIANG, X ;

KLAGES, CP ;

ZACHAI, R ;

HARTWEG, M ;

FUSSER, HJ .

APPLIED PHYSICS LETTERS, 1993, 62 (26) :3438-3440

[5]

JIANG X, 1992, DIAM RELAT MATER, V2, P407

[6]

MA GHM, 1991, PHYS REV B, V45, P11067

[7] MECHANISM OF BIAS-ENHANCED NUCLEATION AND HETEROEPITAXY OF DIAMOND ON SI [J].

ROBERTSON, J .

[8] MPCVD DIAMOND DEPOSITION ON BIAS PRETREATED POROUS SILICON [J].

SPITZL, R ;

RAIKO, V ;

HEIDERHOFF, R ;

GNASER, H ;

ENGEMANN, J .

[9] TEXTURED DIAMOND GROWTH ON (100) BETA-SIC VIA MICROWAVE PLASMA CHEMICAL VAPOR-DEPOSITION [J].

STONER, BR ;

GLASS, JT .

APPLIED PHYSICS LETTERS, 1992, 60 (06) :698-700

[10]

STONER BR, 1992, J MATER RES, V7, P1

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