Doping dependence of the Raman peaks intensity of graphene close to the Dirac point

被引：172

作者：

Casiraghi, C. ^{[1
]}

机构：

[1] Free Univ Berlin, Dept Phys, D-14195 Berlin, Germany

来源：

PHYSICAL REVIEW B | 2009年 / 80卷 / 23期

关键词：

doping; electron-phonon interactions; graphene; Raman spectra; SUSPENDED GRAPHENE; CHARGED IMPURITIES; SPECTROSCOPY; SCATTERING; GRAPHITE;

D O I：

10.1103/PhysRevB.80.233407

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Here we use pristine graphene samples in order to analyze how the Raman peaks intensity, measured at 2.41 and 1.96 eV excitation energy, changes with the amount of doping. The use of pristine graphene allows investigating the intensity dependence close to the Dirac point. We show that the G peak intensity is independent on the doping, while the 2D peak intensity strongly decreases for increasing doping. Analyzing this dependence in the framework of a fully resonant process, we found that the total electron-phonon scattering rate is similar to 40 meV (60 ps(-1)) at 2.41 eV.

引用

页数：3

共 28 条

[1] Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene [J].

Basko, D. M. ;

Piscanec, S. ;

Ferrari, A. C. .

PHYSICAL REVIEW B, 2009, 80 (16)

[2] Calculation of the Raman G peak intensity in monolayer graphene: role of Ward identities [J].

Basko, D. M. .

NEW JOURNAL OF PHYSICS, 2009, 11

[3] Boundary problems for Dirac electrons and edge-assisted Raman scattering in graphene [J].

Basko, D. M. .

PHYSICAL REVIEW B, 2009, 79 (20)

[4] Theory of resonant multiphonon Raman scattering in graphene [J].

Basko, D. M. .

PHYSICAL REVIEW B, 2008, 78 (12)

[5] Probing the Intrinsic Properties of Exfoliated Graphene: Raman Spectroscopy of Free-Standing Monolayers [J].

Berciaud, Stephane ;

Ryu, Sunmin ;

Brus, Louis E. ;

Heinz, Tony F. .

NANO LETTERS, 2009, 9 (01) :346-352

[6] Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point [J].

Blake, P. ;

Yang, R. ;

Morozov, S. V. ;

Schedin, F. ;

Ponomarenko, L. A. ;

Zhukov, A. A. ;

Nair, R. R. ;

Grigorieva, I. V. ;

Novoselov, K. S. ;

Geim, A. K. .

SOLID STATE COMMUNICATIONS, 2009, 149 (27-28) :1068-1071

[7] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[8] Raman fingerprint of charged impurities in graphene [J].

Casiraghi, C. ;

Pisana, S. ;

Novoselov, K. S. ;

Geim, A. K. ;

Ferrari, A. C. .

APPLIED PHYSICS LETTERS, 2007, 91 (23)

[9] Rayleigh imaging of graphene and graphene layers [J].

Casiraghi, C. ;

Hartschuh, A. ;

Lidorikis, E. ;

Qian, H. ;

Harutyunyan, H. ;

Gokus, T. ;

Novoselov, K. S. ;

Ferrari, A. C. .

NANO LETTERS, 2007, 7 (09) :2711-2717

[10] Raman Spectroscopy of Graphene Edges [J].

Casiraghi, C. ;

Hartschuh, A. ;

Qian, H. ;

Piscanec, S. ;

Georgi, C. ;

Fasoli, A. ;

Novoselov, K. S. ;

Basko, D. M. ;

Ferrari, A. C. .

NANO LETTERS, 2009, 9 (04) :1433-1441

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