Growth of nanotubes for electronics

被引：117

作者：

Robertson, John ^{[1
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge CB2 1PZ, England

来源：

MATERIALS TODAY | 2007年 / 10卷 / 1-2期

关键词：

WALLED CARBON NANOTUBES; CHEMICAL-VAPOR-DEPOSITION; LOW-TEMPERATURE GROWTH; PATTERNED GROWTH; HIGH-PERFORMANCE; TRANSISTORS; FUTURE; THICKNESS; CATALYST; UNIFORM;

D O I：

10.1016/S1369-7021(06)71790-4

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The roadmap for semiconductor devices envisages that carbon nanotubes or semiconducting nanowires could become important in about ten years. This article reviews where carbon nanotubes could contribute to microelectronics, in terms of vias, interconnects, and field-effect transistors. It focuses particularly on the requirements microelectronics places on the growth of nanotubes. That is, control over the formation of semiconducting or metallic tubes, controlling the growth location and direction, and achieving high enough nucleation densities.

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页码：36 / 43

页数：8

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