共 24 条
[3]
THE EFFECT OF (NH4)2S TREATMENT ON THE INTERFACE CHARACTERISTICS OF GAAS MIS STRUCTURES
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1988, 27 (07)
:L1331-L1333
[8]
SURFACE-STRUCTURE OF INAS (001) TREATED WITH (NH4)2SX SOLUTION
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1991, 30 (5A)
:L786-L789
[9]
STRUCTURE OF S-PASSIVATED INP(100)-(1X1) SURFACE
[J].
APPLIED PHYSICS LETTERS,
1992, 60 (22)
:2773-2775
[10]
PHOTOELECTRON CORE-LEVEL SPECTROSCOPY AND SCANNING-TUNNELING-MICROSCOPY STUDY OF THE SULFUR-TREATED GAAS(100) SURFACE
[J].
PHYSICAL REVIEW B,
1994, 50 (19)
:14237-14245