H2S-TREATED GAP(001) SURFACE STUDIED BY LOW-ENERGY ELECTRON-DIFFRACTION, AUGER-ELECTRON SPECTROSCOPY, AND X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：24

作者：

FUKUDA, Y

SANADA, N

KURODA, M

SUZUKI, Y

机构：

[1] Research Institute of Electronics, Shizuoka University

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 08期

关键词：

D O I：

10.1063/1.107740

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The GaP(001) surface treated by H2S has been studied using low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), and x-ray photoelectron spectroscopy (XPS). We, for the first time, find the new surface structure, S/GaP (001)-(1 X 2), obtained by H2S treatment at 450-degrees-C. The coverage of sulfur is estimated to be half monolayer by AES measurement. XPS results indicate that only Ga-S bonds are formed on the surface.

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页码：955 / 957

页数：3

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