Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3

被引:861
作者
Hsieh, D. [1 ]
Xia, Y. [1 ]
Qian, D. [1 ]
Wray, L. [1 ]
Meier, F. [2 ,3 ]
Dil, J. H. [2 ,3 ]
Osterwalder, J. [3 ]
Patthey, L. [2 ]
Fedorov, A. V. [4 ]
Lin, H. [5 ]
Bansil, A. [5 ]
Grauer, D. [6 ]
Hor, Y. S. [6 ]
Cava, R. J. [6 ]
Hasan, M. Z. [1 ]
机构
[1] Princeton Univ, Joseph Henry Labs Phys, Princeton, NJ 08544 USA
[2] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland
[3] Univ Zurich Irchel, Inst Phys, CH-8057 Zurich, Switzerland
[4] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA
[5] Northeastern Univ, Dept Phys, Boston, MA 02115 USA
[6] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevLett.103.146401
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z(2) topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (delta similar to 150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z(2) topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.
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页数:4
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