Observation of Time-Reversal-Protected Single-Dirac-Cone Topological-Insulator States in Bi2Te3 and Sb2Te3

被引：872

作者：

Hsieh, D. ^{[1
]}

Xia, Y. ^{[1
]}

Qian, D. ^{[1
]}

Wray, L. ^{[1
]}

Meier, F. ^{[2
,3
]}

Dil, J. H. ^{[2
,3
]}

Osterwalder, J. ^{[3
]}

Patthey, L. ^{[2
]}

Fedorov, A. V. ^{[4
]}

Lin, H. ^{[5
]}

Bansil, A. ^{[5
]}

Grauer, D. ^{[6
]}

Hor, Y. S. ^{[6
]}

Cava, R. J. ^{[6
]}

Hasan, M. Z. ^{[1
]}

机构：

[1] Princeton Univ, Joseph Henry Labs Phys, Princeton, NJ 08544 USA

[2] Paul Scherrer Inst, Swiss Light Source, CH-5232 Villigen, Switzerland

[3] Univ Zurich Irchel, Inst Phys, CH-8057 Zurich, Switzerland

[4] Lawrence Berkeley Natl Lab, Adv Light Source, Berkeley, CA 94720 USA

[5] Northeastern Univ, Dept Phys, Boston, MA 02115 USA

[6] Princeton Univ, Dept Chem, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 14期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.103.146401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We show that the strongly spin-orbit coupled materials Bi2Te3 and Sb2Te3 and their derivatives belong to the Z(2) topological-insulator class. Using a combination of first-principles theoretical calculations and photoemission spectroscopy, we directly show that Bi2Te3 is a large spin-orbit-induced indirect bulk band gap (delta similar to 150 meV) semiconductor whose surface is characterized by a single topological spin-Dirac cone. The electronic structure of self-doped Sb2Te3 exhibits similar Z(2) topological properties. We demonstrate that the dynamics of spin-Dirac fermions can be controlled through systematic Mn doping, making these materials classes potentially suitable for topological device applications.

引用

页数：4

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