Decay dynamics of visible luminescence in amorphous silicon nanoparticles

被引:32
作者
Kanemitsu, Y [1 ]
Fukunishi, Y [1 ]
Kushida, T [1 ]
机构
[1] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300101, Japan
关键词
D O I
10.1063/1.126927
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the recombination dynamics of carriers in amorphous silicon (a-Si) nanoparticles prepared by electrochemical anodization of hydrogenated a-Si films. The photoluminescence (PL) lifetime of the fast-decay component in a-Si nanoparticles is shorter than that in crystalline silicon (c-Si) nanoparticles. The energy dependence of the PL lifetime in a-Si nanoparticles is different from that in c-Si nanoparticles. The PL decay dynamics of a-Si nanoparticles is determined by recombination processes of carriers localized in the band-tail state. The origin of the blueshift of the PL spectrum in a-Si nanoparticles will be discussed. (C) 2000 American Institute of Physics. [S0003-6951(00)00728-2].
引用
收藏
页码:211 / 213
页数:3
相关论文
共 25 条
[1]   Electronic structure of amorphous silicon nanoclusters [J].
Allan, G ;
Delerue, C ;
Lannoo, M .
PHYSICAL REVIEW LETTERS, 1997, 78 (16) :3161-3164
[2]   COMPARISON OF ROOM-TEMPERATURE PHOTOLUMINESCENCE DECAYS IN ANODICALLY OXIDIZED CRYSTALLINE AND X-RAY-AMORPHOUS POROUS SILICON [J].
BUSTARRET, E ;
MIHALCESCU, I ;
LIGEON, M ;
ROMESTAIN, R ;
VIAL, JC ;
MADEORE, F .
JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :105-109
[3]   VISIBLE-LIGHT EMISSION AT ROOM-TEMPERATURE FROM PARTIALLY OXIDIZED AMORPHOUS-SILICON [J].
BUSTARRET, E ;
LIGEON, M ;
ORTEGA, L .
SOLID STATE COMMUNICATIONS, 1992, 83 (07) :461-464
[4]   High-resolution transmission electron microscopy study of luminescent anodized amorphous silicon [J].
Bustarret, E ;
Sauvain, E ;
Ligeon, M .
PHILOSOPHICAL MAGAZINE LETTERS, 1997, 75 (01) :35-42
[5]   SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS [J].
CANHAM, LT .
APPLIED PHYSICS LETTERS, 1990, 57 (10) :1046-1048
[6]   THE TEMPERATURE-DEPENDENCE OF PHOTO-LUMINESCENCE IN A-SI-H ALLOYS [J].
COLLINS, RW ;
PAESLER, MA ;
PAUL, W .
SOLID STATE COMMUNICATIONS, 1980, 34 (10) :833-836
[7]   The structural and luminescence properties of porous silicon [J].
Cullis, AG ;
Canham, LT ;
Calcott, PDJ .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (03) :909-965
[8]   VISIBLE-LIGHT EMISSION DUE TO QUANTUM SIZE EFFECTS IN HIGHLY POROUS CRYSTALLINE SILICON [J].
CULLIS, AG ;
CANHAM, LT .
NATURE, 1991, 353 (6342) :335-338
[9]   A model of size-dependent photoluminescence in amorphous silicon nanostructures: Comparison with observations of porous silicon [J].
Estes, MJ ;
Moddel, G .
APPLIED PHYSICS LETTERS, 1996, 68 (13) :1814-1816
[10]   TEMPERATURE-DEPENDENCE OF THE RADIATIVE LIFETIME IN POROUS SILICON [J].
HOOFT, GW ;
KESSENER, YARR ;
RIKKEN, GLJA ;
VENHUIZEN, AHJ .
APPLIED PHYSICS LETTERS, 1992, 61 (19) :2344-2346