Real Space Surface Reconstructions of Decapped As-rich In0.53Ga0.47As(001)-(2x4)

被引：15

作者：

Shen, Jian ^{[1
,2
]}

Winn, Darby ^{[2
]}

Melitz, Wilhelm ^{[1
,2
]}

Clemens, Jonathon ^{[2
]}

Kummel, Andrew C. ^{[2
]}

机构：

[1] Univ Calif San Diego, Mat Sci & Engn Program, La Jolla, CA 92093 USA

[2] Univ Calif San Diego, Dept Chem & Biochem, La Jolla, CA 92093 USA

来源：

PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS 6 | 2008年 / 16卷 / 05期

关键词：

D O I：

10.1149/1.2981627

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The surface reconstructions of decapped In0.53Ga0.47As(001) have been studied using scanning tunneling microscopy (STM). It is shown that the As-rich alpha 2(2x4) and beta 2(2x4) reconstructions, predicted by density function theory (DFT) (1-3) for GaAs(001)-(2x4), InAs(001)-(2x4) and InGaAs(001)-(2x4) surfaces, were observed to coexist on In0.53Ga0.47As (001). In contrast to molecular beam epitaxy (MBE) grown In0.53Ga0.47As(001), the STM results on decapped In0.53Ga0.47As(001) do not show the existence of the heterodimer In0.53Ga0.47As(001)-(4x3) structure (4-5). At the intermediate annealing temperature ranges of 400 - 440 degrees C, a (2x4)-(4x2) mixed surface reconstruction was observed. When In0.53Ga0.47As(001)/IDP sample was annealed between 440 degrees C and 470 degrees C, a pure In/Ga-rich (4x2) surface reconstruction was observed.

引用

页码：463 / +

页数：3

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