Gate Tunable Infrared Phonon Anomalies in Bilayer Graphene

被引：126

作者：

Kuzmenko, A. B. ^{[1
]}

Benfatto, L. ^{[2
,3
,4
,5
]}

Cappelluti, E. ^{[3
,4
,5
]}

Crassee, I. ^{[1
]}

van der Marel, D. ^{[1
]}

Blake, P. ^{[6
]}

Novoselov, K. S. ^{[6
]}

Geim, A. K. ^{[6
]}

机构：

[1] Univ Geneva, Dept Phys Mat Condensee, CH-1211 Geneva 4, Switzerland

[2] Ctr Studi & Ric Enrico Fermi, I-00184 Rome, Italy

[3] CNR INFM, SMC Res Ctr, I-00185 Rome, Italy

[4] ISC CNR, I-00185 Rome, Italy

[5] Univ Roma La Sapienza, Dipartimento Fis, I-00185 Rome, Italy

[6] Univ Manchester, Manchester Ctr Mesosci & Nanotechnol, Manchester M13 9PL, Lancs, England

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 11期

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1103/PhysRevLett.103.116804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We observe a giant increase of the infrared intensity and a softening of the in-plane antisymmetric phonon mode E-u (similar to 0.2 eV) in bilayer graphene as a function of the gate-induced doping. The phonon peak has a pronounced Fano-like asymmetry. We suggest that the intensity growth and the softening originate from the coupling of the phonon mode to the narrow electronic transition between parallel bands of the same character, while the asymmetry is due to the interaction with the continuum of transitions between the lowest hole and electron bands. The growth of the peak can be interpreted as a "charged-phonon'' effect observed previously in organic chain conductors and doped fullerenes, which can be tuned in graphene with the gate voltage.

引用

页数：4

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