SIMS and RBS study of thermally annealed Pd/β-SiC interfaces

被引：13

作者：

Roy, S

Basu, S ^{[1
]}

Jacob, C

Tyagi, AK

机构：

[1] Indian Inst Technol, Ctr Mat Sci, Kharagpur 721302, W Bengal, India

[2] Indira Gandhi Ctr Atom Res, Div Sci Mat, Kalpakkam 603102, Tamil Nadu, India

来源：

APPLIED SURFACE SCIENCE | 2002年 / 202卷 / 1-2期

关键词：

Pd/SiC interface; thermal annealing; SIMS; RBS;

D O I：

10.1016/S0169-4332(02)00896-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The Pd/beta-SiC interfaces were studied using secondary ion mass spectrometry (SIMS) and Rutherford backscattering spectrometry (RBS). This was done with the intent of clarifying any reaction or inter-diffusion at the interface upon prolonged annealing at different temperatures in air. SIMS study indicates that the interface is stable up to 400 degreesC for at least 12 h. However, at 800 degreesC, the interface was completely degraded with significant inter-diffusion of palladium and silicon. The RBS study confirms the SIMS observations. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：73 / 79

页数：7

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