Palladium-promoted oxidation of Si at low temperatures

被引：10

作者：

Kobayashi, H

Kawa, H

Yuasa, T

Nakato, Y

Yoneda, K

机构：

[1] OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN

[2] OSAKA UNIV, RES CTR PHOTOENERGET ORGAN MAT, TOYONAKA, OSAKA 560, JAPAN

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

silicon oxide; palladium; silicon; XPS; oxidation; oxygen atom;

D O I：

10.1016/S0169-4332(96)00779-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A palladium (Pd) layer deposited on the ultrathin silicon oxide-covered Si substrate promotes Si oxidation. Take-off angle dependent X-ray photoelectron spectroscopy (XPS) measurements and the capacitance-voltage measurements show that after the heat treatment of the [Pd/chemical oxide/Si(100)] specimens at 400 degrees C in oxygen, the thickness of the oxide layer between the Pd layer and the Si substrate increases to 4-4.5 nm but no oxide is formed on the Pd surface. When the Pd layer is deposited on the hydrofluoric acid-etched Si surface, palladium silicide is formed, while no silicide is formed in cases where the Pd film is deposited on the thin chemical oxide covered-Si substrate. It is concluded that the diffusing and reaction species are oxygen atoms (or oxygen ions), initially formed at the Pd surface.

引用

页码：590 / 594

页数：5

共 25 条

[1] INTERACTION OF OXYGEN WITH SILICON D-METAL INTERFACES - A PHOTOEMISSION INVESTIGATION [J].