Charge Confinement and Doping at LaAlO3/SrTiO3 Interfaces

被引：56

作者：

Fix, T. ^{[1
]}

Schoofs, F. ^{[1
]}

MacManus-Driscoll, J. L. ^{[1
]}

Blamire, M. G. ^{[1
]}

机构：

[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England

来源：

PHYSICAL REVIEW LETTERS | 2009年 / 103卷 / 16期

关键词：

HETEROSTRUCTURES; OXIDES;

D O I：

10.1103/PhysRevLett.103.166802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The thickness and origin of the free charge layer which forms at the LaAlO3/SrTiO3 interface is still uncertain. By inserting Mn dopants at different distances from the interface we can locate the position of carriers within the SrTiO3 surface layers. We show that the majority of the carriers in fully-oxygenated samples are confined within 1 unit cell of the interface. This confirms the "polar-catastrophe'' mechanism proposed for this system but the low mobility of these carriers demonstrates the need for improved materials for applications and a more complete understanding of the role of the minority of higher mobility carriers identified.

引用

页数：4

共 25 条

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