Effects of thin oxide in metal-semiconductor and metal-insulator-semiconductor epi-GaAs Schottky diodes

被引:153
作者
Hudait, MK
Krupanidhi, SB [1 ]
机构
[1] Indian Inst Sci, Ctr Mat Res, Bangalore 560012, Karnataka, India
[2] Bharat Elect, Cent Res Lab, Bangalore 560013, Karnataka, India
关键词
D O I
10.1016/S0038-1101(99)00320-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of metal-insulator-semiconductor (MIS) GaAs Schottky diodes are investigated and compared with metal-semiconductor (MS) diodes. The MIS diode showed nonideal behavior of I-V characteristics with an ideality factor of 1.17 and a barrier height of 0.97 eV. The energy distribution of interface states density was determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height, though it is small. The reduction in the saturation current in the MIS case is caused by a thin oxide layer and is due to the combination of increased barrier height and a decrease in the Richardson constant. The carrier concentration anomaly observed between the MIS and MS diodes measured from reverse bias C-V measurements is explained via oxide (beta-Ga2O3) traps due to the Ga-vacancy by deep level transient spectroscopy (DLTS) measurement. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:1089 / 1097
页数:9
相关论文
共 49 条
[11]   TEMPERATURE-DEPENDENCE OF IV AND C-V CHARACTERISTICS OF NI/N-CDF2 SCHOTTKY-BARRIER TYPE DIODES [J].
COVA, P ;
SINGH, A .
SOLID-STATE ELECTRONICS, 1990, 33 (01) :11-19
[13]   OUTLINE AND COMPARISON OF POSSIBLE EFFECTS PRESENT IN A METAL-THIN-FILM-INSULATOR-SEMICONDUCTOR SOLAR-CELL [J].
FONASH, SJ .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (08) :3597-3602
[14]  
GOETZBERGER A, 1966, APPL PHYS LETT, V9, P444
[15]   Relation for the nonequilibrium population of the interface states: Effects on the bias dependence of the ideality factor [J].
Gomila, G ;
Rubi, JM .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (06) :2674-2681
[16]   Effects of interface states on the non-stationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes [J].
Gomila, G .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1999, 32 (01) :64-71
[18]   HOW TO DETERMINE PARAMETERS OF DEEP LEVELS BY DLTS SINGLE TEMPERATURE SCANNING [J].
GOTO, H ;
ADACHI, Y ;
IKOMA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (10) :1979-1982
[19]   Anomalous current transport in Au/low-doped n-GaAs Schottky barrier diodes at low temperatures [J].
Hardikar, S ;
Hudait, MK ;
Modak, P ;
Krupanidhi, SB ;
Padha, N .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1999, 68 (01) :49-55
[20]   SURFACE-STATES IN GAAS TUNNEL MIS STRUCTURES [J].
HIROSE, M ;
YOKOYAMA, S ;
OSAKA, Y .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 42 (02) :483-488