Compositional inhomogeneity and immiscibility of a GaInN ternary alloy

被引：103

作者：

Wakahara, A

Tokuda, T

Dang, XZ

Noda, S

Sasaki, A

机构：

[1] Dept. of Electron. Sci. and Eng., Kyoto University

[2] Department of Physics, Peking University

[3] Department of Electronics, Osaka Electro-Commun. University

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 07期

关键词：

D O I：

10.1063/1.119684

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Compositional inhomogeneity in a GaInN ternary alloy layer is investigated. A theoretical estimation of the interaction parameter based on the delta lattice parameter suggests that the immiscibility of InN in a nitride alloy is very strong. We investigate the compositional splitting and the existence of InN inclusion in the GaInN epilayer grown on sapphire (0001) substrates. Thc mechanism of compositional inhomogeneity is discussed. (C) 1997 American Institute of Physics.

引用

收藏

页码：906 / 908

页数：3

相关论文

共 15 条

[1] Shortest wavelength semiconductor laser diode [J].

Akasaki, I ;

Sota, S ;

Sakai, H ;

Tanaka, T ;

Koike, M ;

Amano, H .

ELECTRONICS LETTERS, 1996, 32 (12) :1105-1106

[2]

[Anonymous], 1982, NEW SER

[3] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[4]

KOUKITSU A, IN PRESS JPN J APPL

[5]

MATSUOKA T, 1990, INST PHYS CONF SER, P141

[6] INSITU FTIR AND SURFACE-ANALYSIS OF THE REACTION OF TRIMETHYLGALLIUM AND AMMONIA [J].

MAZZARESE, D ;

TRIPATHI, A ;

CONNER, WC ;

JONES, KA ;

CALDERON, L ;

ECKART, DW .

JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (03) :369-377

[7] CANDELA-CLASS HIGH-BRIGHTNESS INGAN/ALGAN DOUBLE-HETEROSTRUCTURE BLUE-LIGHT-EMITTING DIODES [J].

NAKAMURA, S ;

MUKAI, T ;

SENOH, M .

APPLIED PHYSICS LETTERS, 1994, 64 (13) :1687-1689

[8] HIGH-BRIGHTNESS INGAN BLUE, GREEN AND YELLOW LIGHT-EMITTING-DIODES WITH QUANTUM-WELL STRUCTURES [J].

NAKAMURA, S ;

SENOH, N ;

IWASA, N ;

NAGAHAMA, SI .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (7A) :L797-L799

[9] InGaN-based multi-quantum-well-structure laser diodes [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (1B) :L74-L76

[10] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707