Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO

被引：41

作者：

Hamdani, F ^{[1
]}

Botchkarev, AE ^{[1
]}

Tang, H ^{[1
]}

Kim, W ^{[1
]}

Morkoc, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 21期

关键词：

D O I：

10.1063/1.120262

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present results on the effect of substrate surface polarity, oxygen and zinc faces, on the quality of GaN epitaxial layers grown on ZnO(0001) substrates by reactive ammonia molecular beam epitaxy. The possible effects dealing with the disparity in surface preparation of the two faces have been eliminated. Photoluminescence and reflectivity measurements demonstrate that the oxygen face leads to higher quality GaN on ZnO compared to the zinc face. We also present optical data obtained by using different low-temperature AlN, GaN, and InxGa1-xN buffer layers. The best result has been obtained with lattice-matched In0.20Ga0.80N buffer layer. (C) 1997 American Institute of Physics.

引用

页码：3111 / 3113

页数：3

共 23 条

[11] WIDE-GAP SEMICONDUCTOR INGAN AND INGAALN GROWN BY MOVPE [J].